장재형Jae-Hyung Jang

ABOUT ME

• Jae-Hyung Jang received his B.S. and M.S. degrees in electrical engineering from Seoul National University, Seoul, Korea, in 1993 and 1995, respectively, and the Ph.D. degree in electrical and computer engineering from the University of Illinois at Urbana–Champaign, Urbana, in 2002. He is currently a Professor and Associate Dean of Graduate School, Chair of School of Energy Engineering at Korea Institute of Energy Technology (KENTECH). Before joining KENTECH in 2021, and had been a professor in Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju, from 2004. During his stay at GIST, he served as Chair of Electrical Engineering and Computer Science from 2019 to 2021 and the director of the Research Institute of Solar Energy (RISE) from 2015 to 2019. He is a senior member of IEEE, a committee member of IEEE compound semiconductor devices and circuit division, member of the board of directors at Korea Photovoltaics Society.
  
  His research interests include InP optoelectronic devices, SiC and GaN-based electron devices, and GaAs, CIGS-based thin-film solar cells. He is also doing active research on active metamaterial devices for microwave and THz applications.
  
  During his tenure, he has worked on compound semiconductor devices and their applications in high power and high-frequency devices and photovoltaics. Using the university-based cleanroom environment, his group members fabricated and characterized these devices. The primary material platforms for his research are III-V, such as SiC, GaN, and GaAs, and II-VI, such as CIGS and CZTS.
  
  With SiC materials, he is working on high voltage (> 10 kV) and high current (>100 A) semiconductor photoconductive switches (PCSS), which have potential applications in the high power converters for the dc grid. He demonstrated one of the best performance devices and modules.
  
  GaN- and InP-based high electron mobility transistors (HEMTs) have been studied for application in high power and high-frequency semiconductor devices for over 20 years. Even though the GaN devices are currently in the market for 5G communications, there may be potential applications in medium-level power electronics where the major players are Si LDMOS and SiC-based field-effect transistors (FETs). As the switching speed for the switching mode power converters increases for the more versatile functionality, GaN-based FETs will have a chance to reach the market. He also demonstrated world-fast switching metal-semiconductor-metal diodes on GaAs and GaN platforms. He realized metamaterials used to control the THz (1000 GHz) waves, such as amplitude modulators, phase modulators, tunable polarization converters, and quarter-wave plates.
  
  His group reported one of the highest efficiency GaAs multi-junction solar cells in collaboration with KANC and Microlink devices in the U.S. They have worked on optical nanostructures and quantum dots or nano-crystal-based luminescent down conversion techniques to enhance the light-harvesting efficiency of the GaAs and CIGS solar cells.
  
  He served as a director of the Research Institute of Solar and Sustainable Energies (RISE) for more than three years. During his service at RISE, he has established four research centers, including Future Energy Grid, Chemical Energy Storage System, Photovoltaics, and Plastic Electronics research centers.
  
  With his expertise in compound semiconductors and administrative experience in research and academic organizations, he is now taking part in building up KENTECH to a world-renowned research-oriented educational institute.