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Publication

Journal Room Temperature Terahertz Emission from Single Gate Gallium Nitride Devices

Author : A. B. Khatri, D. M. Geum, J. H. Jang
  • Source Journal of Photonic Science and Technology, Vol 3. No 1, 2013.
  • Year 2012

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Total 154건 8 페이지
Surface Relief Structures for a Flexible Broadband Terahertz Absorber
  • AuthorD. H. Kim, D. S. Kim, S. Hwang and J. H. Jang
  • Year2012
  • SourceOptics Express, Vol. 20, No. 15, pp. 16815-16822, 2012.
Broadband terahertz absorber realized by selfassembled multilayer glass spheres
  • AuthorD. S. Kim, D. H. Kim, S. Hwang and J. H. Jang
  • Year2012
  • SourceOptics Express, Vol. 20, pp. 13566-13572, 2012.
Room Temperature Terahertz Emission from Single Gate Gallium Nitride Devices
  • AuthorA. B. Khatri, D. M. Geum, J. H. Jang
  • Year2012
  • SourceJournal of Photonic Science and Technology, Vol 3. No 1, 2013.
A High-Coverage Nanoparticle Monolayer for the Fabrication of a Subwavelength Structure on InP Subst…
  • AuthorD. S. Kim, M. S. Park, and J. H. Jang
  • Year2011
  • SourceJournal of Nanoscience and Nanotechnology, Vol. 11, No. 8, paper 5, 2011.
Folded Monopole LC-Loaded Antennas and Their Polarization Reconfigurability
  • AuthorS. H. Kim, and J. H. Jang
  • Year2011
  • SourceMicrowave and Optical Technology Letters, 53, 6, pp. 1197-1201, 2011.
Low Resistance Mo/Al/Mo/Au Ohmic Contact Scheme to InAlN/AlN/GaN Heterostructure
  • AuthorJ. Lee, M. Yan, B. Ofuonye, J. H. Jang, X. Gao, S. Guo, and I. Adesida
  • Year2011
  • Sourcephysica status solidi A, Vol. 208, No. 7, pp. 1538-1540, 2011.
Buried-Pt Gate InP/In0.52Al0.48As/In0.53Ga0.47As Pseudomorphic HEMTs
  • AuthorS. H. Shin, T. W. Kim, J. I. Song, and J. H. Jang
  • Year2011
  • SourceSolid State Electronics , pp. 000, 2011.
Reflection Characteristics Of 1-D EBG Ground Plane And Its Application To A Planar Dipole Antenna
  • AuthorS. H. Kim, T. T. Nguyen, and J. H. Jang
  • Year2011
  • SourceProgress In Electromagnetics Research, 120, pp. 51-66 , 2011.
Electrical Characteristics of Buried-Pt Schottky Contacts on Thin InP/InAlAs Heterostructures
  • AuthorS. H. Shin, J. I. Song, S. D. Park, J. W. Bae, G. Y. Yeom, T. W. Kim, and J. H. Jang
  • Year2011
  • SourceJournal of Vacuum Science and Technology B, Vol. 29, No. 4, pp. 041209 (1-5), 2011.
Fabrication of a Cone-Shaped Subwavelength Structures by Utilizing a Confined Convective Self-Assemb…
  • AuthorD. S. Kim, M. S. Park, and J. H. Jang
  • Year2011
  • SourceJournal of Vacuum Science and Technology , vol. 29, no. 2, 020602, 2011.
Effects of salty-developer temperature on electron-beam-exposed hydrogen silsequioxane resist for ul…
  • AuthorM. Yan, J. Lee, B. Ofuonye, S. Choi, J. H. Jang, and I. Adesida
  • Year2010
  • SourceJournal of Vacuum Science and Technology B , 28, paper 6, pp. C6S23- C6S27, 2010.
Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl2/O2 Neutral Beam
  • AuthorB. J. Park, J. K. Yeon, W. S. Lim, S. K. Kang, J. W. Bae, G. Y. Yeom, M. S. Jhon, S. H. Shin, K. S. Chang, J. I. Song, Y. T. Lee, J. H. Jang
  • Year2010
  • SourcePlasma Chemistry and Plasma Processing, 30, pp. 633-640, 2010.
High Performance MOCVD-Grown ZnO Thin-Film Transistor with a Thin MgZnO Layer at Channel/Gate Insula…
  • AuthorK. Remashan, Y. S. Choi, S. J. Park, and J. H. Jang
  • Year2010
  • SourceJournal of the Electrochemical Society, Vol. 157, No. 12, pp. H1121-H1126, 2010.
High Field-Effect Mobility Bottom-Gated MOCVD ZnO Thin-Film Transistors with SiO2/Si3N4 Bilayer Gate…
  • AuthorK. Remashan, Y. S. Choi, S. J. Park, and J. H. Jang
  • Year2010
  • SourceJournal of Electrochemical Society , vol. 157, no. 12, pp. H1110-H1115, 2010.
Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Su…
  • AuthorK. Remashan, Y. S. Choi, S. K. Kang, J. W. Bae, G. Y. Yeom, S. J. Park, and J. H. Jang
  • Year2010
  • SourceJapanese Journal of Applied Physics 49, pp. 04DF20-1~04DF207, 2010.