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댓글 0건 조회 200회 작성일 21-12-24 15:22

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Journal Side-illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC

Author : Pyeung Hwi Choi, Yong Pyo Kim, Min-Seong Kim, Jiheon Ryu, Sung-hyun Baek, Sung-Min Hong, Sungbae Lee, Jae-Hyung Jang
  • Source IEEE Transactions on Electron Devices
  • Year 2021

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Total 152건 10 페이지
Characteristics of 0.2 mm Depletion and Quasi-enhancement Mode Self-aligned Gate Capless p-HEMTs
  • AuthorT.-W. Kim, D.-H. Kim, S.-H. Shin, S.-J. Jo, J.H. Jang, and J.-I. Song
  • Year2006
  • SourceElectronics Letters, Vol. 42, No. 20, pp. 1178-1179, 2006.
Fabrication and Characterization of In0.53Ga0.47As/In0.52Al0.48As Capless HEMTs
  • AuthorJ. H. Jang, and I. Adesida
  • Year2006
  • SourceIEICE Transactions on Electronics, 89, 8, pp. 1259-1262, 2006.
Atomic layer etching of InP using a low angle forward reflected Ne neutral beam
  • AuthorS. D. Park, C. K. Oh, J. W. Bae, and G. Y. Yeom, T. W. Kim, J. I. Song, J. H. Jang
  • Year2006
  • SourceApplied Physics Letters, 89, 043109, 2006.
Low loss high mesa optical waveguides based on InGaAsP/InP heterostructures
  • AuthorW. S. Choi, B. A. Yu, Y. R. Lee, J. W. Bae, W. Zhao, I. Adesida and J. H. Jang
  • Year2006
  • SourceJornal of Nanoscience and Nanotechnology, 6, 11, pp. 3562-3566, 2006.
Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Using …
  • AuthorD. H. Jun, J. H. Jang, I. Adesida and J. I. Song
  • Year2006
  • SourceJapanese Journal of Applied Physics, vol. 45, no. 4B, pp. 3475-3478, 2006.
Enhancement-mode High Electron Mobility Transistors Lattice Matched To InP Substrates Utilizing Ti/P…
  • AuthorJ. H. Jang, S. Kim and I. Adesida
  • Year2006
  • SourceJapanese Journal of Applied Physics, pp. 3349-3354, 2006.
High Performance InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors Utilizing Thin InAl…
  • AuthorS. W. Cho, J. H. Yun, D. H. Cheon, I. Adesida, N. Pan and J. H. Jang
  • Year2006
  • SourceSolid State Electronics, pp. 902-907, 2006.
Fabrication and characterization of In0.52Al0.48As/In0.53Ga0.47As E/D-HEMT Lattice Matched to InP Su…
  • AuthorJ. H. Jang, S. Kim and I. Adesida
  • Year2006
  • SourceSolid State Electronics, pp. 852-856, 2006.
Effect of mask thickness on the nanoscale sidewall roughness and optical scattering losses of deep-e…
  • AuthorW. Zhao, J. W. Bae, I. Adesida and J. H. Jang
  • Year2005
  • SourceJournal of Vacuum Science and Technology, 25, 5, pp. 2041-2045, 2005.
Enhancement-mode In0.52Al0.48As/In0.53Ga0.47As/InP HEMT utilizing Ir/Ti/Pt/Au gate
  • AuthorS. Kim, I. Adesida and J. H. Jang
  • Year2005
  • SourceElectronics Letters, pp. 871-872, 2005.
Low resistance ohmic contact to p-type GaAn using Pd/Ir/Au multilayer scheme
  • AuthorJ. W. Bae, T. Hossain, I. Adesida, K. H. Bogart, D. Koleske, A. A. Allerman and J. H. Jang
  • Year2005
  • SourceJournal of Vacuum Science and Technology B, 23, 3, pp. 1072-1075, 2005.
Low resistance Pd/Ir/Au Ohmic contacts on p-GaAsSb
  • AuthorJ. H. Jang, H. K. Cho, J. W. Bae, N. Pan, I. Adesida
  • Year2004
  • SourceElectronics Letters, 40, pp.1550-1551, 2004.
Study of the evolution of nanoscale roughness from the line edge of exposed resist to the sidewall o…
  • AuthorJ. H. Jang, W. Zhao, J. W. Bae, I. Adesida, A. Lepore, M. Kwakernaak and J. H. Abeles
  • Year2004
  • SourceJournal of Vacuum Science and Technology B, 22, pp. 2538-2541, 2004.
Electrical Characteristics of Ir/Au and Pd/Ir/Au ohmic contacts on p-InGaAs
  • AuthorJ. H. Jang, S. Kim and I. Adesida
  • Year2004
  • SourceElectronics Letters, 40, pp. 77-78, 2004.
Effect of an irregular pattern on wavelength selectivity in a volume hologram
  • AuthorJ. H. Jang, Y. H. Kang, and H. Lee
  • Year1997
  • SourceOptics Lett., vol. 20, no. 23, pp 2426-2428,1995.