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댓글 0건 조회 238회 작성일 22-04-01 15:53

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Journal Enhancement-mode In0.52Al0.48As/In0.53Ga0.47As/InP HEMT utilizing Ir/Ti/Pt/Au gate

Author : S. Kim, I. Adesida and J. H. Jang
  • Source Electronics Letters, pp. 871-872, 2005.
  • Year 2005

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Total 389건 26 페이지
High Performance InP/InAlAs/GaAsSb/InP Double Heterojunction Bipolar Transistors Utilizing Thin InAl…
  • AuthorS. W. Cho, J. H. Yun, D. H. Cheon, I. Adesida, N. Pan and J. H. Jang
  • Year2006
  • SourceSolid State Electronics, pp. 902-907, 2006.
Fabrication and characterization of In0.52Al0.48As/In0.53Ga0.47As E/D-HEMT Lattice Matched to InP Su…
  • AuthorJ. H. Jang, S. Kim and I. Adesida
  • Year2006
  • SourceSolid State Electronics, pp. 852-856, 2006.
Effect of mask thickness on the nanoscale sidewall roughness and optical scattering losses of deep-e…
  • AuthorW. Zhao, J. W. Bae, I. Adesida and J. H. Jang
  • Year2005
  • SourceJournal of Vacuum Science and Technology, 25, 5, pp. 2041-2045, 2005.
Enhancement-mode In0.52Al0.48As/In0.53Ga0.47As/InP HEMT utilizing Ir/Ti/Pt/Au gate
  • AuthorS. Kim, I. Adesida and J. H. Jang
  • Year2005
  • SourceElectronics Letters, pp. 871-872, 2005.
Low resistance ohmic contact to p-type GaAn using Pd/Ir/Au multilayer scheme
  • AuthorJ. W. Bae, T. Hossain, I. Adesida, K. H. Bogart, D. Koleske, A. A. Allerman and J. H. Jang
  • Year2005
  • SourceJournal of Vacuum Science and Technology B, 23, 3, pp. 1072-1075, 2005.
Low resistance Pd/Ir/Au Ohmic contacts on p-GaAsSb
  • AuthorJ. H. Jang, H. K. Cho, J. W. Bae, N. Pan, I. Adesida
  • Year2004
  • SourceElectronics Letters, 40, pp.1550-1551, 2004.
Study of the evolution of nanoscale roughness from the line edge of exposed resist to the sidewall o…
  • AuthorJ. H. Jang, W. Zhao, J. W. Bae, I. Adesida, A. Lepore, M. Kwakernaak and J. H. Abeles
  • Year2004
  • SourceJournal of Vacuum Science and Technology B, 22, pp. 2538-2541, 2004.
Electrical Characteristics of Ir/Au and Pd/Ir/Au ohmic contacts on p-InGaAs
  • AuthorJ. H. Jang, S. Kim and I. Adesida
  • Year2004
  • SourceElectronics Letters, 40, pp. 77-78, 2004.
Effect of an irregular pattern on wavelength selectivity in a volume hologram
  • AuthorJ. H. Jang, Y. H. Kang, and H. Lee
  • Year1997
  • SourceOptics Lett., vol. 20, no. 23, pp 2426-2428,1995.
Analysis of the diffracted wave from a volume hologram stored with an irregular pattern
  • AuthorY. H. Kang, J. H. Jang, H. Lee, and S. K. Jin
  • Year1997
  • SourceOptical & Quantum Electronics. vol. 29, no. 1, pp 11-19, 1997.
Side-illuminated Photoconductive Semiconductor Switch Based on High Purity Semi-Insulating 4H-SiC
  • AuthorPyeung Hwi Choi, Yong Pyo Kim, Min-Seong Kim, Jiheon Ryu, Sung-hyun Baek, Sung-Min Hong, Sungbae Lee, Jae-Hyung Jang
  • Year2021
  • SourceIEEE Transactions on Electron Devices
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