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Introduction
Members
Professor
Postdoc
PhD student
M.S. student
Alumni
Project
Research
Compound Semiconductor Devices
Solar cell
THz technology
Publication
Journal
Conference
Patents
Equipment
Fabrication
Measurement
Community
News
Gallery
Publication
Journal
Conference
Patents
Publication 카테고리
전체
Journal
Conference
Patents
검색대상
제목
Author
Year
Source
검색어
필수
검색
Total 389건
25 페이지
A High-power MMIC VCO Utilizing Metamorphic HEMT Technology
Author
D. H. Jun, S. W. Kim, K. S. Seo, J. H. Jang, and J. I. Song
Year
2007
Source
Microwave and Optical Technology Letters, 49, 9, pp. 2221-2224, 2007.
ZnO-based thin film transistors having high refractive index silicon nitride gate dielectric
Author
K. Remashan, Dae-Kue Hwang, Seong-Ju Park, Jae-Hyung Jang
Year
2007
Source
Applied Physics Letters, pp. 182101, 2007.
Highly selective and low damage atomic layer etching of InP/InAlAs heterostructures for HEMT fabrica…
Author
S. D. Park, C. K. Oh, W. S. Lim, H. C. Lee, J. W. Bae, and G. Y. Yeoma, T. W. Kim, J. I. Song, and J. H. Jang
Year
2007
Source
Applied Physics Letters, 91, pp. 013110, 2007.
Micro-Racetrack Notch Filters Based on InGaAsP/InP High Mesa Optical Waveguides
Author
W.S. Choi, W. Zhao, J.W. Bae, I. Adesida, B.A. Yu, Y.L. Lee, J. H. Jang
Year
2007
Source
Japanese Journal of Applied Physics, 46, 4B, pp. 2434-2439, 2007.
Effect of Temperature on the Bandwidth and Responsivity of Uni-Traveling-Carrier and Modified Uni-Tr…
Author
Dong-Hwan Jun, Jae-Hyung Jang, and Jong-In Song
Year
2007
Source
Japanese Jounal of Applied Physics, Vol. 46, No. 4B, pp. 2360-2363, 2007.
Effect of Fluorine Ion/Neutral-beam irradiation on ohmic contact formation to n-type GaN
Author
H. C. Lee, J. W. Bae, B. J. Park, J. H. Jang, and G. Y. Yeom
Year
2007
Source
Electrochemical and solid state letters, 10, 6, pp. H161-H164, 2007.
Comparative studies on Low resistance Pd-based ohmic contacts on p-GaAsSb
Author
J. H. Jang, H.K. Cho, J.W. Bae, S.W. Cho, N. Pan, and I. Adesida
Year
2007
Source
Journal of the Electrochemical Society, 154, 5, pp. H389-392, 2007.
Effects of electrical bias stress on the performance of ZnO based thin film transistors fabricated b…
Author
R. Navamathavan, Eun-Jeong Yang, Jae-Hong Lim, Dae-Kue Hwang, in-Yong Oh, Jin-Ho Yang, Jae-Hyung Jang, Seong-Ju Park
Year
2006
Source
Journal of Electrochemical Society, pp. G385-G388, 2005.
Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering
Author
R. Navamathavan, Jae-Hong Lim, Dae-Kue Hwang, Baek-Hyun Kim, Jin-Yong Oh, Jin-Ho Yang, Hyun-Sik Kim and Seong-Ju Park, Jae-Hyung Jang
Year
2006
Source
Journal of the Korean Physical Society, 48, paper 2, pp. 271-274, 2006
Characteristics of 0.2 mm Depletion and Quasi-enhancement Mode Self-aligned Gate Capless p-HEMTs
Author
T.-W. Kim, D.-H. Kim, S.-H. Shin, S.-J. Jo, J.H. Jang, and J.-I. Song
Year
2006
Source
Electronics Letters, Vol. 42, No. 20, pp. 1178-1179, 2006.
Fabrication and Characterization of In0.53Ga0.47As/In0.52Al0.48As Capless HEMTs
Author
J. H. Jang, and I. Adesida
Year
2006
Source
IEICE Transactions on Electronics, 89, 8, pp. 1259-1262, 2006.
Atomic layer etching of InP using a low angle forward reflected Ne neutral beam
Author
S. D. Park, C. K. Oh, J. W. Bae, and G. Y. Yeom, T. W. Kim, J. I. Song, J. H. Jang
Year
2006
Source
Applied Physics Letters, 89, 043109, 2006.
Low loss high mesa optical waveguides based on InGaAsP/InP heterostructures
Author
W. S. Choi, B. A. Yu, Y. R. Lee, J. W. Bae, W. Zhao, I. Adesida and J. H. Jang
Year
2006
Source
Jornal of Nanoscience and Nanotechnology, 6, 11, pp. 3562-3566, 2006.
Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Using …
Author
D. H. Jun, J. H. Jang, I. Adesida and J. I. Song
Year
2006
Source
Japanese Journal of Applied Physics, vol. 45, no. 4B, pp. 3475-3478, 2006.
Enhancement-mode High Electron Mobility Transistors Lattice Matched To InP Substrates Utilizing Ti/P…
Author
J. H. Jang, S. Kim and I. Adesida
Year
2006
Source
Japanese Journal of Applied Physics, pp. 3349-3354, 2006.
처음
이전
21
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22
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23
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24
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열린
25
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26
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