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댓글 0건 조회 258회 작성일 22-04-01 16:37

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Journal Effect of two-step recess process using atomic layer etching on performance of In0.52Al0.48As/In0.53Ga0.47As p-HEMTs

Author : T. W. Kim, D. H. Kim, S. D. Park, G. Y. Yeom, B. O. Lim, J. K. Rhee, J. H. Jang, and J. I. Song
  • Source IEEE Electron Device Letters, pp. 001-003, 2007.
  • Year 2007

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Total 389건 24 페이지
Electrical Characteristics of Buried-Pt Schottky Contacts on Thin InP/InAlAs Heterostructures
  • AuthorS. H. Shin, J. I. Song, S. D. Park, J. W. Bae, G. Y. Yeom, T. W. Kim, and J. H. Jang
  • Year2011
  • SourceJournal of Vacuum Science and Technology B, Vol. 29, No. 4, pp. 041209 (1-5), 2011.
Fabrication of a Cone-Shaped Subwavelength Structures by Utilizing a Confined Convective Self-Assemb…
  • AuthorD. S. Kim, M. S. Park, and J. H. Jang
  • Year2011
  • SourceJournal of Vacuum Science and Technology , vol. 29, no. 2, 020602, 2011.
Effects of salty-developer temperature on electron-beam-exposed hydrogen silsequioxane resist for ul…
  • AuthorM. Yan, J. Lee, B. Ofuonye, S. Choi, J. H. Jang, and I. Adesida
  • Year2010
  • SourceJournal of Vacuum Science and Technology B , 28, paper 6, pp. C6S23- C6S27, 2010.
Highly Selective and Low Damage Etching of GaAs/AlGaAs Heterostructure using Cl2/O2 Neutral Beam
  • AuthorB. J. Park, J. K. Yeon, W. S. Lim, S. K. Kang, J. W. Bae, G. Y. Yeom, M. S. Jhon, S. H. Shin, K. S. Chang, J. I. Song, Y. T. Lee, J. H. Jang
  • Year2010
  • SourcePlasma Chemistry and Plasma Processing, 30, pp. 633-640, 2010.
High Performance MOCVD-Grown ZnO Thin-Film Transistor with a Thin MgZnO Layer at Channel/Gate Insula…
  • AuthorK. Remashan, Y. S. Choi, S. J. Park, and J. H. Jang
  • Year2010
  • SourceJournal of the Electrochemical Society, Vol. 157, No. 12, pp. H1121-H1126, 2010.
High Field-Effect Mobility Bottom-Gated MOCVD ZnO Thin-Film Transistors with SiO2/Si3N4 Bilayer Gate…
  • AuthorK. Remashan, Y. S. Choi, S. J. Park, and J. H. Jang
  • Year2010
  • SourceJournal of Electrochemical Society , vol. 157, no. 12, pp. H1110-H1115, 2010.
Enhancement-Mode Metal Organic Chemical Vapor Deposition-Grown ZnO Thin-Film Transistors on Glass Su…
  • AuthorK. Remashan, Y. S. Choi, S. K. Kang, J. W. Bae, G. Y. Yeom, S. J. Park, and J. H. Jang
  • Year2010
  • SourceJapanese Journal of Applied Physics 49, pp. 04DF20-1~04DF207, 2010.
Enhancement of Optical Gain in Floating-base InGaP/GaAs Heterojunction Phototrasistors
  • AuthorM. S. Park, J. H. Jang
  • Year2010
  • SourceIEEE Photonics Technology Letters, 22, 16, pp. 1202-1204, 2010.
Enhanced Performance of MOCVD ZnO TFTs on Glass Substrates with Nitrogen-rich Silicon Nitride Gate D…
  • AuthorK. Remashan, Y. S. Choi,b S. J. Park, and J. H. Jang
  • Year2010
  • SourceJournal of Electrochemical Society, Vol. 157, No. 1, pp. H60-H64, 2010.
Ring Oscillator Circuit Based on ZnO Thin-film Transistors Fabricated by RF Magnetron Sputtering
  • AuthorW.C. Shin, K. Remashan, M. S. Oh, S. J. Park, J. H. Jang
  • Year2009
  • SourceJournal of the Korean Physical Society , 55, pp. 1514-1518, 2009.
Slow-Wave Characteristics of a 1-D EBG Structure for a Miniaturized Monopole Antenna
  • AuthorS. H. Kim, K. H. Oh, H. Lim, J. I. Song, and J. H. Jang
  • Year2009
  • SourceMicrowave and Optical Technology Letters , Vol. 51, No. 5, pp. 1231-1235, May, 2009.
Effect of N2O Plasma Treatment on the Performance of ZnO TFTs
  • AuthorK. Remashan,a D. K. Hwang,b S. D. Park,c J. W. Bae,c G. Y. Yeom,c S. J. Park,b and ,a Z
  • Year2008
  • SourceElectrochemical and Solid-State Letters, 2008.
Hydrogen Sensor Based on A Palladium-Coated Long-Period Fiber Grating Pair
  • AuthorYoung Ho Kim, Myoung Jin Kim, Min-Su Park, Jae-Hyung Jang, and Byeong Ha Lee
  • Year2008
  • SourceJournal of the Optical Society of Korea Vol. 12, No. 4, December 2008, pp. 221-225, 2008.
Optical Characteristics of GaAsSb Lattice-Matched to InP for long wavelength photodetection
  • AuthorM. S. Park, J. H. Jang
  • Year2007
  • SourceJournal of Nanoscience and Nanotechnology, pp.000, 2007.
Effect of two-step recess process using atomic layer etching on performance of In0.52Al0.48As/In0.53…
  • AuthorT. W. Kim, D. H. Kim, S. D. Park, G. Y. Yeom, B. O. Lim, J. K. Rhee, J. H. Jang, and J. I. Song
  • Year2007
  • SourceIEEE Electron Device Letters, pp. 001-003, 2007.