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댓글 0건 조회 286회 작성일 22-04-02 16:35

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Journal Graphene Based Salisbury Screen for Terahertz Absorber

Author : J. M. Woo, M. S. Kim, H. W. Kim, and J. H. Jang
  • Source Applied Physics Letters, 104, 081106, 2014.
  • Year 2014

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Total 392건 20 페이지
X-ray photoelectron spectroscopy and photoluminescence investigations of the spray deposited cobalt …
  • AuthorN. L. Tarwal, K. V. Gurav, T. P. Kumar, Y. K. Jeong, H. S. Shim, I. Y. Kim, J. H. Kim, J. H. Jang, P. S. Patil
  • Year2014
  • SourceJournal of Analytical and Applied Pyrolysis, Vol 106, pp 26-32, 2014
Graphene Based Salisbury Screen for Terahertz Absorber
  • AuthorJ. M. Woo, M. S. Kim, H. W. Kim, and J. H. Jang
  • Year2014
  • SourceApplied Physics Letters, 104, 081106, 2014.
Optical endpoint detection for plasma reduction of graphene oxide
  • AuthorM. J. Kim, Y. H. Kahng,Y. J. Kim, K. M. Park, J. H. Jang , K. H. Lee
  • Year2013
  • SourceAIP Advances, Vol. 3, No. 3, pp. 032121(1-7), 2013.
Beauty of heterogeneity :Sn-ZnO with cabbage-like morphology
  • AuthorN. L. Tarwal, J. H. Jang, M. G. Gang, J. H. Kim, and P. S. Patil
  • Year2013
  • SourceMaterials Today, 16, pp. 403-404, 2013.
Secure Dual-Chip Contactless Card with an Integrated Complementary Touch Switch
  • AuthorB.H. Shin, J. W. Yum, S. H. Kim, J. Y. Lee, and J. H. Jang
  • Year2013
  • SourceMicrowave and Optical Technology Letters, 55, paper 3, pp. 529-533, 2013
Nanometer-scale Fabrication of Hydrogen Silsesquioxane (HSQ) Films with Post Exposure Baking
  • AuthorD. H. Kim, S. K. Kang, G. Y. Yeom and J. H. Jang
  • Year2013
  • SourceJournal of Nanoscience and Nanotechnology, 13, paper 3, pp. 1918-1922, 2013.
Fluxless Eutectic Bonding of GaAs-on-Si by Using Ag/Sn Solder
  • AuthorSung-Hwa Eo, Dae-Seon Kim, Ho-Jung Jeong, and Jae-Hyung Jang
  • Year2013
  • SourceElectronic Materials Letters, 9, paper 6, pp. 787-791, 2013
High Performance MIMO Antenna with 1-D EBG Ground Structures for Handset Application
  • AuthorS. H. Kim, J. Y. Lee, T. T. Nguyen, and J. H. Jang
  • Year2013
  • SourceIEEE Antennas and Wireless Propagation Letters, 12, paper 1, pp. 1468-1471, 2013.
75-nm T-shaped Gate for In0.17Al0.83N/GaN HEMTs with Minimal Short Channel Effect
  • AuthorD. M. Geum, S. H. Shin, M. S. Kim, J. H. Jang
  • Year2013
  • SourceElectronics letters, vol. 49, no. 24, pp. 1536-1537, 2013.
Hydrogenated IGZO Thin Film Transistors Using High Pressure Hydrogen Annealing
  • AuthorS. I. Oh, G. D. N. Choi, H. S. Hwang, W. Lu, and J. H. Jang
  • Year2013
  • SourceIEEE Transaction on Electron Devices, vol. 60, no. 8, pp. 2537-2541, 2013.
산화 그라핀과 산화철의 적층구조를 저항층으로 사용한 비휘발성 메모리 소자
  • AuthorJang Jae Hyung, ANOOP RANI, Oh, Se I
  • Year2018
  • SourceUS16/497,279, granted in 2018
형광체를 이용한 고효율 태양박막전지 및 이의 제조방법
  • Author
  • Year2018
  • SourceKR 10-1823108, granted in 2018
Terahertz radiating device and fabricating method for the same
  • Author
  • Year2017
  • SourceUS9,680,000, granted in 2017
실리콘 기반의 온도 제어를 통해 동작하는 테라헤르츠 변조기
  • Author
  • Year2017
  • SourceKR 10-1702489, granted in 2017
테라헤르츠 변조기
  • Author
  • Year2017
  • SourceKR10-1704664, granted in 2017