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Conference Long Wavelength In0.53Ga0.47As Metamorphic PIN photodiodes on GaAs substrates

Author : J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida
  • Source IEEE Photonics technology letters, vol. 23, no. 2, pp. 123-126, 2001.
  • Year 2001

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Total 389건 15 페이지
High Frequency Metamorphic P-I-N Detectors and HEMT Transimpedance Amplifiers: Candidates for Fiber …
  • AuthorE. Hoke, R.E. Leoni, C.S. Whelan, P. J. Lemonias, J. H. Jang, and I. Adesida
  • Year2002
  • SourceJournal of Vacuum Science Technology B, vol. 20, no.3, pp. 1209-1212, May/June 2002.
Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma react…
  • AuthorS. L. Rommel, J. H. Jang, Wu Lu, G. Cueva, L. Zhou, I. Adesida, G. Pajer, R. Whaley, A. Lepore, Z. Schellanbarger, and J. H. Abeles
  • Year2002
  • SourceJournal of Vacuum Science and Technology B, vol. 20, no. 4, pp. 1327-1330, 2002.
High Frequency Metamorphic P-I-N Detectors and HEMT Transimpedance Amplifiers: Candidates for Fiber …
  • AuthorW. E. Hoke, R. E. Leoni, C. S. Whelan, P. J. Lemonias, J. H. Jang and I. Adesida
  • Year2001
  • Source20th North American Conf. On MBE, 2001.
Metamorphic Double Heterojunction InGaAs/InGaAlAs/InAlAs Photodiodes on GaAs substrates for 40 Gbit/…
  • AuthorJ. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, P. Pay and I. Adesida
  • Year2001
  • SourceOptical Fiber Communications Conference OFC＇01, Anaheim, CA, vol. 4, pp. PD6-1 ? PD6-3, 2001.
Photoreponses of metamorphic double heterojunction photodiodes under high power optical illumination
  • AuthorJ. H. Jang, G. Cueva, W. E. Hoke, P. J. Lemonias, P. Pay and I. Adesida
  • Year2001
  • SourceTechnical Digest of LEOS＇ 01, Sandiego, CA, pp. 384-385, 2001.
The Impact of a Large Bandgap Drift Region in Long Wavelength Metamorphic Photodiodes
  • AuthorJ. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, P. Fay, and I. Adesida
  • Year2001
  • SourceIEEE Photonics technology letters, Oct.,pp 1097-1099 2001.
Metamorphic Heterojunction Bipolar Transistors and P-I-N photodiodes on GaAs Substrates Prepared by …
  • AuthorE. Hoke, P. J. Lemonias, T. D. Kennedy, A. Torabi, E. K. Tong, R. J. Bourque, J. H. Jang, G. Cueva, D.C. Dumka, I. Adesida, K. L. Chang, and K. C. Hsieh
  • Year2001
  • SourceJournal of Vacuum Science Technology B, vol. 19, no. 4, 2001.
Long Wavelength Metamorphic Double Heterojunction In0.53Ga0.47As/InAlGaAs/ In0.52Al0.48As Photodiode…
  • AuthorJ. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, P. Fay, and I. Adesida
  • Year2001
  • SourceElectronics letters, vol. 37, no. 11, pp. 707-708, 2001.
Long Wavelength In0.53Ga0.47As Metamorphic PIN photodiodes on GaAs substrates
  • AuthorJ. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, and I. Adesida
  • Year2001
  • SourceIEEE Photonics technology letters, vol. 23, no. 2, pp. 123-126, 2001.
Metamorphic Heterojunction Bipolar Transistors and P-I-N photodiodes on GaAs Substrates Prepared by …
  • AuthorW. E. Hoke, P. J. Lemonias, T. D. Kennedy, A. Torabi, E. K. Tong, R. J. Bourque, J. H. Jang, G. Cueva, D. C. Dumka, I. Adesida, K. L. Chang and K. C. Hsieh
  • Year2000
  • Source19th North American Conf. On MBE, 2000.
Metamorphic PIN photodiodes on GaAs for long wavelength application
  • AuthorJ. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias and I. Adesida
  • Year2000
  • SourceDevice Research Conference, Denver, CO, pp. 173-174, 2000.
Random phased volume hologram of wavelength and correlation multiplexing for optical interconnects
  • AuthorYong Hoon Kang, Jae Hyung Jang and Byongho Lee
  • Year1996
  • SourceProceedings of 3rd Optoelectronics Conference, pp. 143-145, 1996.
Wavelength selectivity enhancement in a volume hologram using random pattern
  • AuthorJae Hyung Jang and Hyuk Lee
  • Year1994
  • SourceProceedings of KIEE, pp. 254-256, 1994.
Luminescent down-shifting CsPbBr3 perovskite nanocrystal for flexible Cu(In,Ga)Se2 solar cells
  • AuthorYe-Chan Kim, Ho-Jung Jeong, Sung-Tae Kim, Young Hyun Song, Bo Young Kim, Jae Pil Kim,Bong Kyun Kang, Ju-Hyung Yund, Jae-Hyung Jang
  • Year2019
  • SourceNanoscale
Self-Aligned Metal-Semiconductor-Metal Varactors Based on the AlGaN/GaN Heterostructure
  • Author황지현, 이계정, 누만, 차수형, 홍성민, 장재형
  • Year2019
  • SourceIEEE Electron Device Letters