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댓글 0건 조회 201회 작성일 22-04-04 11:43

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Conference Wavelength dependent characteristics of High speed Metamorphic P-i-I-N Photodiodes

Author : J. H. Jang, W. E. Hoke, P. Fay and I. Adesida
  • Source IEEE Photonics Technology Letters, vol. 15, no. 2, pp. 281-283, 2003.
  • Year 2003

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Total 389건 14 페이지
Experimental study of masking scheme effects on the nanoscale sidewall roughness of deep etched InP/…
  • AuthorW. Zhao, J. W. Bae, J. H. Jang, I. Adesida, M. Kwakernaak, A. Lepore, J. H. Abeles
  • Year2004
  • SourceProceeding of Electronic Materials Conference, P2, p. 42, 2004.
Indium-Phosphide-based microresonator modulators and wavelength multiplexers
  • AuthorJ. H. Abeles, M. H. Kwakernaak, H. Mohseni, A. N. Lepore, G. A. Pajer, G. Griffel, T. P. Lee, A. M. Braun, D. R. Bechtle, Z. A. Shellenbarger, I. Adesida, S. Rommel, J. W. Bae and J. H. Jang
  • Year2004
  • Source2004 Digest of the LEOS Summer Topical Meeting, TuC4.6, pp. 60-61, 2004.
Calculation of Scattering loss utilizing the sidewall roughness information of InP/InGaAsP optical w…
  • AuthorW. S. Choi and J. H. Jang
  • Year2004
  • SourcePhotonics Conference 2004, TP-23, 2004.
Wavelength selective WDM modulator with high-Q ring resonators in deeply etched InP/InGaAsP waveguid…
  • AuthorM. H. Kwakernaak, A. N. Lepore, H. Mohseni, N. Maley, H. An, Z. A. Shellenbarger, A. M. Braun, W. K. Chan, J. H. Abeles, J. W. Bae, J. H. Jang and I. Adesida
  • Year2004
  • SourceTechnical Digest of Lasers and Electro-optics, 2, pp. 112-113, 2004.
금속에 따른 p-GaAsSb 오믹 접촉의 전기적 특성에 관한 비교 연구
  • AuthorS. W. Cho and J. H. Jang
  • Year2004
  • SourceProceeding of the KIEEME Annual Autumn Conference 2004, pp. 33-36, 2004.
Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for lo…
  • AuthorJ. W. Bae, W. Zhao, J. H. Jang, I. Adesida, A. Lepore, M. Kwakernaak and J. H. Abeles
  • Year2003
  • SourceEIPBN, 2003.
Long-wavelength metamorphic InGaAs detectors on GaAs substrates
  • AuthorJ. H. Jang, W. E. Hoke and I. Adesida
  • Year2003
  • SourceLEOS annual meeting, pp. 919-920, 2003.
Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for lo…
  • AuthorJ. W. Bae, W. Zhao, J. H. Jang, I. Adesida, A. Lepore, M. Kwakernaak, and J. H. Abeles
  • Year2003
  • SourceJournal of Vacuum Science and Technology B. pp. 2888-2891, 2003.
Direct measurement of nanoscale sidewall roughness of optical waveguides using atomic force microsco…
  • AuthorJ. H. Jang, W. Zhao, J. W. Bae, D. Selvanathan, S. L. Rommel, I. Adesida, A. Lepore, M. Kwakernaak and J. H. Abeles
  • Year2003
  • SourceApplied Physics Letters, pp. 4116-4118, 2003.
Metamorphic PIN Photodetectors
  • AuthorI.Adesida, 장재형, S.Kim, J.W.Bae, W.E. Hoke
  • Year2003
  • SourceMetamorphic PIN Photodetectors, LEOS annual meeting, pp. 000, 2003.
Properties of Metamorphic Materials and Device Structures on GaAs Substrates
  • AuthorW. E. Hoke, T. D. Kennedy, A. Torabi, C. S. Whelan, P. F. Marsh, R. E. Leoni, J. H. Jang, I. Adesida and K. C. Hsieh
  • Year2003
  • SourceJournal of Crystal Growth, 251, pp. 804-810, 2003.
Wavelength dependent characteristics of High speed Metamorphic P-i-I-N Photodiodes
  • AuthorJ. H. Jang, W. E. Hoke, P. Fay and I. Adesida
  • Year2003
  • SourceIEEE Photonics Technology Letters, vol. 15, no. 2, pp. 281-283, 2003.
Monolithic Integration of In0.53Ga0.47As photodiodes and In0.53Ga0.47As/In0.52Al0.48As HEMTs on Meta…
  • AuthorJ. H. Jang, G. Cueva, W. E. Hoke, R. Sankaralingam, P. Pay and I. Adesida
  • Year2002
  • SourceTechnical Digest of GaAs IC symposium, pp. 55-58, 2002.
Properties of Metamorphic Materials and Device Structures on GaAs Substrates
  • AuthorW. E. Hoke, T. D. Kennedy, A. Torabi, C. S. Whelan, P. F. Marsh, R. E. Leoni, J. H. Jang, I. Adesida and K. C. Hsieh
  • Year2002
  • SourceInvited to 21th North American Conf. On MBE, pp. 69-70, 2002.
Metamorphic Graded Bandgap InGaAs/InGaAlAs/InAlAs Double Heterojunction P-i-I-N Photodiodes
  • AuthorJ. H. Jang, G. Cueva, W. E. Hoke, P.J. Lemonias, P. Fay, and I. Adesida
  • Year2002
  • SourceIEEE Journal of Lightwave Technology, vol. 20, no.3, pp. 507-514, March 2002