Publication

Total 191건 12 페이지
금속에 따른 p-GaAsSb 오믹 접촉의 전기적 특성에 관한 비교 연구
  • AuthorS. W. Cho and J. H. Jang
  • Year2004
  • SourceProceeding of the KIEEME Annual Autumn Conference 2004, pp. 33-36, 2004.
Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for lo…
  • AuthorJ. W. Bae, W. Zhao, J. H. Jang, I. Adesida, A. Lepore, M. Kwakernaak and J. H. Abeles
  • Year2003
  • SourceEIPBN, 2003.
Long-wavelength metamorphic InGaAs detectors on GaAs substrates
  • AuthorJ. H. Jang, W. E. Hoke and I. Adesida
  • Year2003
  • SourceLEOS annual meeting, pp. 919-920, 2003.
Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for lo…
  • AuthorJ. W. Bae, W. Zhao, J. H. Jang, I. Adesida, A. Lepore, M. Kwakernaak, and J. H. Abeles
  • Year2003
  • SourceJournal of Vacuum Science and Technology B. pp. 2888-2891, 2003.
Direct measurement of nanoscale sidewall roughness of optical waveguides using atomic force microsco…
  • AuthorJ. H. Jang, W. Zhao, J. W. Bae, D. Selvanathan, S. L. Rommel, I. Adesida, A. Lepore, M. Kwakernaak and J. H. Abeles
  • Year2003
  • SourceApplied Physics Letters, pp. 4116-4118, 2003.
Metamorphic PIN Photodetectors
  • AuthorI.Adesida, 장재형, S.Kim, J.W.Bae, W.E. Hoke
  • Year2003
  • SourceMetamorphic PIN Photodetectors, LEOS annual meeting, pp. 000, 2003.
Properties of Metamorphic Materials and Device Structures on GaAs Substrates
  • AuthorW. E. Hoke, T. D. Kennedy, A. Torabi, C. S. Whelan, P. F. Marsh, R. E. Leoni, J. H. Jang, I. Adesida and K. C. Hsieh
  • Year2003
  • SourceJournal of Crystal Growth, 251, pp. 804-810, 2003.
Wavelength dependent characteristics of High speed Metamorphic P-i-I-N Photodiodes
  • AuthorJ. H. Jang, W. E. Hoke, P. Fay and I. Adesida
  • Year2003
  • SourceIEEE Photonics Technology Letters, vol. 15, no. 2, pp. 281-283, 2003.
Monolithic Integration of In0.53Ga0.47As photodiodes and In0.53Ga0.47As/In0.52Al0.48As HEMTs on Meta…
  • AuthorJ. H. Jang, G. Cueva, W. E. Hoke, R. Sankaralingam, P. Pay and I. Adesida
  • Year2002
  • SourceTechnical Digest of GaAs IC symposium, pp. 55-58, 2002.
Properties of Metamorphic Materials and Device Structures on GaAs Substrates
  • AuthorW. E. Hoke, T. D. Kennedy, A. Torabi, C. S. Whelan, P. F. Marsh, R. E. Leoni, J. H. Jang, I. Adesida and K. C. Hsieh
  • Year2002
  • SourceInvited to 21th North American Conf. On MBE, pp. 69-70, 2002.
Metamorphic Graded Bandgap InGaAs/InGaAlAs/InAlAs Double Heterojunction P-i-I-N Photodiodes
  • AuthorJ. H. Jang, G. Cueva, W. E. Hoke, P.J. Lemonias, P. Fay, and I. Adesida
  • Year2002
  • SourceIEEE Journal of Lightwave Technology, vol. 20, no.3, pp. 507-514, March 2002
High Frequency Metamorphic P-I-N Detectors and HEMT Transimpedance Amplifiers: Candidates for Fiber …
  • AuthorE. Hoke, R.E. Leoni, C.S. Whelan, P. J. Lemonias, J. H. Jang, and I. Adesida
  • Year2002
  • SourceJournal of Vacuum Science Technology B, vol. 20, no.3, pp. 1209-1212, May/June 2002.
Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma react…
  • AuthorS. L. Rommel, J. H. Jang, Wu Lu, G. Cueva, L. Zhou, I. Adesida, G. Pajer, R. Whaley, A. Lepore, Z. Schellanbarger, and J. H. Abeles
  • Year2002
  • SourceJournal of Vacuum Science and Technology B, vol. 20, no. 4, pp. 1327-1330, 2002.
High Frequency Metamorphic P-I-N Detectors and HEMT Transimpedance Amplifiers: Candidates for Fiber …
  • AuthorW. E. Hoke, R. E. Leoni, C. S. Whelan, P. J. Lemonias, J. H. Jang and I. Adesida
  • Year2001
  • Source20th North American Conf. On MBE, 2001.
Metamorphic Double Heterojunction InGaAs/InGaAlAs/InAlAs Photodiodes on GaAs substrates for 40 Gbit/…
  • AuthorJ. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, P. Pay and I. Adesida
  • Year2001
  • SourceOptical Fiber Communications Conference OFC＇01, Anaheim, CA, vol. 4, pp. PD6-1 ? PD6-3, 2001.