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댓글 0건 조회 291회 작성일 22-04-04 13:59

Publication

Conference InP/InGaAs Heterojunction Phototransistors with Horizontally Scaled Emitter-Base Junction Formed by Zn Diffusion

Author : M. S. Park, D. H. Kim and J. H. Jang
  • Source International Union of Materials Rsearch Society-International Conference in Asia (IUMRS-ICA) 2012, pp. 00, 2012.
  • Year 2012

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Total 389건 10 페이지
A Dual Band Planar Meta-material Based on Hybrid Structures in Terahertz Regime
  • AuthorS. Hussain, J. Y. Lee, J. H. Jang
  • Year2012
  • Source32nd Progress in Electromagnetic Research Symposium Moscow, pp. 000, 2012.
InP/InGaAs Heterojunction Phototransistors with Horizontally Scaled Emitter-Base Junction Formed by …
  • AuthorM. S. Park, D. H. Kim and J. H. Jang
  • Year2012
  • SourceInternational Union of Materials Rsearch Society-International Conference in Asia (IUMRS-ICA) 2012, pp. 00, 2012.
Graphene Schottky Contacts on InP/InAlAs Heterostructures
  • AuthorJ. M. Woo, S. S. Shin and J. H. Jang
  • Year2012
  • SourceInternational Conference on Electronic Materials and Nanotechnology for Green Environment, pp. 00, 2012.
Broadband Terahertz Antireflection Structure Fabricated By Utilizing Stamping Method
  • AuthorD. H Kim, D. S Kim and J. H. Jang
  • Year2012
  • Source2nd The Electrochemical Society, pp. 000, 2012.
Self-Assembled Monolayer with Hemispherical Structure for Terahertz (THz) Antireflection Technique
  • AuthorD. S. Kim, D. H. Kim, S. Hwang, J. M. Woo, J. H. Jang
  • Year2012
  • SourceProgress In Electromagnetics Research Symposium 2012, pp. 000, 2012.
An InGaP Sub-Wavelength Structure (SWS) Realized by Colloidal Lithography for Solar Cell Application…
  • AuthorD. S. Kim, S. H. Eo, J. H. Jang
  • Year2012
  • Source222nd The Electrochemical Society, pp. 000, 2012.
Fluxless GaAs-to-Si Eutectic Bonding by Using Ag/Sn Solder
  • AuthorS. H. Eo, D. S. Kim, H. J. Jung, J. H. Jang
  • Year2012
  • SourceInternational Conference on Electronic Materials and Nanotechnology for Green Environment, pp. 00, 2012.
Measurement of Terahertz Emission from GaN HEMT
  • AuthorAbdul Basit Khatri, and Jae-Hyung Jang
  • Year2012
  • Source제2회 한국 광전자학회, pp. 00, 2012
Metal-Semiconductor-Metal Varactors Based on InAlN/GaN
  • AuthorS. H. Shin, D. M. Geum, and J. H. Jang
  • Year2012
  • Source제2회 한국 광전자학회, pp. 00, 2012.
Ohmic contact on AlGaN/GaN HEMT structure with Ti/Al/Ni/Au
  • AuthorJ. M. Woo, D. M. Geum, and J. H. Jang
  • Year2012
  • Source제2회 한국 광전자학회, pp. 00, 2012.
Secure Dual-Chip Contactless Card with an Integrated Complementary Touch Switch
  • AuthorB. H. Shin, J. W. Yum, S. H. Kim, J. Y. Lee, and J. H. Jang
  • Year2012
  • Source2012 International Conference on Information Science and Technology Symposium, 2012.
High pressure hydrogen annealing of Indium-gallium-zinc oxide thin film transistors
  • AuthorS. I. Oh, and J. H. Jang
  • Year2011
  • SourceThe Electronic Materials Conference 2011, pp. 000-000, 2011.
Spatial Metamaterial based on Slot Apertures on a thin Silicon Nitride Membrane in Terahertz Regime
  • AuthorS. Hussain and J. H. Jang
  • Year2011
  • Source5th WCU Symposium on Nano-and Meso-scopic Materials and Chemistry (WCU-05), pp. 000, 2011.
Antireflective Subwavelength Structure Fabricated by Using Polystyrene Nanoparticle Monolayer and Ar…
  • AuthorD. S. Kim, M. S. Park, S. H. Eo and J. H. Jang
  • Year2011
  • SourceInternational Conference of Nano Science and Nano Technology, pp. 383, 2011.
Nanometer-scale Fabrication of Hydrogen Silsesquioxane (HSQ) Films with Post Exposure Baking
  • AuthorD. H. Kim, S. H. Shin, J. M. Woo, S. K. Kang, G. Y. Yeom and J. H. Jang
  • Year2011
  • SourceInternational Conference of Nano Science and Nano Technology, pp. 359, 2011.